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Analytical modelling of the programmed window in FLOTOX EEPROM cells

Analytical modelling of the programmed window in FLOTOX EEPROM cells

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© The Institution of Electrical Engineers
Published

A new simple analytical model for evaluating the programmed window of FLOTOX EEPROM cells at design level, for given programming waveforms and memory cell geometry, is proposed. The model enables optimisation of the memory cell geometry with respect to programmed window amplitude to be easily conducted, as well as correct selection of the programming conditions.

Inspec keywords: PLD programming; MOS integrated circuits; integrated memory circuits; EPROM; semiconductor device models

Other keywords: FLOTOX EEPROM cells; programming waveforms; programmed window; analytical model; memory cell geometry

Subjects: Other MOS integrated circuits; Semiconductor storage; Firmware; Semiconductor device modelling, equivalent circuits, design and testing; Memory circuits

References

    1. 1)
      • R. Bez , D. Cantarelli , P. Cappelletti . Experimental transient analysis of the tunnel current in EEPROM cells. IEEE Trans. , 1081 - 1086
    2. 2)
      • C. Papadas , G. Ghibaudo , G. Pananakakis , C. Riva , P. Ghezzi . Model for programming window degradation in FLOTOX EEPROM cells. IEEE Electron Device Lett. , 89 - 91
    3. 3)
      • A. Bhattacharyya . Modelling of write/erase and charge retention of floating gate EEPROM device. Solid State Electron. , 899 - 906
    4. 4)
      • Gigon, F.: `Compact SPICE model of EEPROM memory cell for writing/erasing/read operation', Proc. of ESSDERC '91, 1991, Montreux, Switzerland, 15, Microelectronic Engineering, p. 629–632.
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