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Analytical modelling of the programmed window in FLOTOX EEPROM cells

Analytical modelling of the programmed window in FLOTOX EEPROM cells

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A new simple analytical model for evaluating the programmed window of FLOTOX EEPROM cells at design level, for given programming waveforms and memory cell geometry, is proposed. The model enables optimisation of the memory cell geometry with respect to programmed window amplitude to be easily conducted, as well as correct selection of the programming conditions.

References

    1. 1)
      • Gigon, F.: `Compact SPICE model of EEPROM memory cell for writing/erasing/read operation', Proc. of ESSDERC '91, 1991, Montreux, Switzerland, 15, Microelectronic Engineering, p. 629–632.
    2. 2)
      • C. Papadas , G. Ghibaudo , G. Pananakakis , C. Riva , P. Ghezzi . Model for programming window degradation in FLOTOX EEPROM cells. IEEE Electron Device Lett. , 89 - 91
    3. 3)
      • R. Bez , D. Cantarelli , P. Cappelletti . Experimental transient analysis of the tunnel current in EEPROM cells. IEEE Trans. , 1081 - 1086
    4. 4)
      • A. Bhattacharyya . Modelling of write/erase and charge retention of floating gate EEPROM device. Solid State Electron. , 899 - 906
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