Room temperature 600 mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE
Continuous wave output power levels of 600 mW at 25°C are reported from 100 μm wide, 300 μm long GaInAs/GaAs/GaInP large area laser diodes grown by CBE without any facet treatment. At these levels, the delivered current is 2 A, with an associated voltage of less than 1.7 V. The characteristic temperature of the structure is 95 K.