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Room temperature 600 mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE

Room temperature 600 mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE

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Continuous wave output power levels of 600 mW at 25°C are reported from 100 μm wide, 300 μm long GaInAs/GaAs/GaInP large area laser diodes grown by CBE without any facet treatment. At these levels, the delivered current is 2 A, with an associated voltage of less than 1.7 V. The characteristic temperature of the structure is 95 K.

References

    1. 1)
      • D.P. Bour , P. Stabile , A. Rosen , W. Janton , L. Elbaum , D.J. Holmes . Two-dimensional array of high-power strained quantum well lasers with λ = 0.95 μm. Appl. Phys. Lett. , 2637 - 2638
    2. 2)
      • G. Zhang , J. Nappi , K. Vanttinen , H. Asonen , M. Pessa . Low threshold current InGaAs/GaAs/GaInP lasers grown by gas-source MBE. Appl. Phys. Lett. , 96 - 98
    3. 3)
      • C.A. Wang , H.K. Choi . Organometallic vapor phase epitaxy of high performance strained layer InGaAs-AlGaAs diode lasers. IEEE J. Quantum Electron. , 681 - 686
    4. 4)
      • Z.L. Liau , S.C. Palmateer , S.H. Groves , J.N. Walpole , L.J. Missaglia . Low threshold InGaAs strained-layer quantumwell lasers (λ = 0.98 μm) with GaInP cladding layers and mass transported buried heterostructures. Appl. Phys. Lett. , 6 - 8
    5. 5)
      • C.A. Wang , S.H. Groves . New materials for diode laser pumping of solid state lasers. IEEE J. Quantum Electron. , 942 - 951
    6. 6)
      • W.T. Tsang , R. Kapre , M.C. Wu , Y.K. Chen . Low threshold InGaAs strained-layer quantum-well lasers (λ = 0.98 μm) with GaInP cladding layers prepared by CBE. Appl. Phys. Lett. , 755 - 757
    7. 7)
      • T.R. Chen , B. Zhao , Y.H. Zhuang , A. Yariv , J.E. Ungar , S. Oh . Ultralow threshold multiquantum well InGaAs lasers. Appl. Phys. Lett. , 1782 - 1784
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