2.0 W CW, diffraction-limited tapered amplifier with diode injection
2.0 W CW, diffraction-limited tapered amplifier with diode injection
- Author(s): D. Mehuys ; D.F. Welch ; L. Goldberg
- DOI: 10.1049/el:19921246
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- Author(s): D. Mehuys 1 ; D.F. Welch 1 ; L. Goldberg 2
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View affiliations
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Affiliations:
1: Spectra Diode Laboratories, San Jose, USA
2: Naval Research Laboratory, Washington, USA
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Affiliations:
1: Spectra Diode Laboratories, San Jose, USA
- Source:
Volume 28, Issue 21,
8 October 1992,
p.
1944 – 1946
DOI: 10.1049/el:19921246 , Print ISSN 0013-5194, Online ISSN 1350-911X
A tapered amplifier 1.5 mm in length and with a taper angle of 5.7° emitted 2.0 W CW into a diffraction-limited pattern when injected with 25 mW incident power from a singlemode laser diode.
Inspec keywords: semiconductor lasers; optical communication equipment; laser cavity resonators
Other keywords: 72 percent; 39 percent; single-pass amplifier; single-mode laser diode; total energy conversion efficiency; semiconductor lasers; diffraction-limited pattern; frequency doubling; 2 W; diffraction-limited tapered amplifier; differential efficiency; free-space communication; 1.5 mm; diode injection; low-power injected beam; extraction efficiency; AR coatings; 25 mW
Subjects: Design of specific laser systems; Semiconductor lasers; Optical communication devices, equipment and systems; Lasing action in semiconductors; Laser resonators and cavities; Optical communication; Laser resonators and cavities
References
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1)
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- Walpole, J., Kintzer, E., Chinn, S., Wang, C., Missaggia, L.: `High power strained layer tapered unstable resonator laser', paper CWN1, Tech. Dig. of Conf. on Lasers and Electro-Optics, 1992, p. 338–340.
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