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Repetition frequency stabilisation of passively mode-locked semiconductor lasers

Repetition frequency stabilisation of passively mode-locked semiconductor lasers

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The repetition frequency of an external cavity mode-locked GaAs semiconductor diode laser has been stabilised by voltage controlled electrical feedback. The phase noise has been reduced by 40 dB at 1 kHz offset from the carrier and timing jitter reduced from more than 30 ps to 4 ps. This technique can be used to stabilise millimetre-wave mode-locked lasers.

References

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      • Derickson, D., Helkey, R., Mar, A., Wasserbauer, J., Bowers, J.: `Microwave and millimeter wave signal generation using modelocked semiconductor lasers with intra-waveguide saturable absorbers', IEEE MTT-S Int. Microwave Symp. Dig., 1992, p. 753–756.
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