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Phase matched AlGaAs/GaAs complementary HBTs for push-pull operation

Phase matched AlGaAs/GaAs complementary HBTs for push-pull operation

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© The Institution of Electrical Engineers
Published

Nearly ideal push-pull phase performance has been demonstrated using monolithically integrated AlGaAs/GaAs complementary HBTs. The maximum relative phase difference between the devices at a 5 GHz fundamental was 7 and 10° at the 10 GHz second harmonic. When compared to single-ended N pn performance the push-pull pairs exhibited lower second and fourth harmonic content while the fundamental and third harmonic levels were simultaneously reinforced. The phase coherence was stable over a large range of base-collector reverse bias and collector current.

Inspec keywords: heterojunction bipolar transistors; III-V semiconductors; gallium arsenide; aluminium compounds; bipolar integrated circuits; MMIC

Other keywords: third harmonic; monolithic integration; maximum relative phase difference; base-collector reverse bias; AlGaAs-GaAs; 5 to 10 GHz; push-pull phase performance; second harmonic; phase coherence; phase matched complementary HBTs; collector current; fourth harmonic

Subjects: Microwave integrated circuits; Bipolar integrated circuits

References

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      • P.M. Asbeck , M.F. Chang , J.A. Higgins , N.H. Sheng , G.J. Sullivan , K. Wang . GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application. IEEE Trans. , 2032 - 2041
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      • P.M. Enquist , D.B. Slater , J.W. Swart . Complementary AlGaAs/GaAs HBT I2L (CHI2L) Technology. IEEE Electron Device Lett. , 180 - 182
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      • D.B. Slater , P.M. Enquist , M.Y. Chen , J.A. Hutchby , A.S. Morris , R.J. Trew . Millimeter-wave AlGaAs/GaAs Pnp HBT. IEEE Electron Device Lett. , 382 - 384
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      • F. Ren , R. Abernathy , S.J. Pearton , T.R. Fullowan , J.R. Lothian , P.W. Wisk , Y.K. Chen , W.S. Hobson , P.R. Smith . Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE. Electron. Lett. , 2391 - 2393
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      • Slater, D.B., Enquist, P.M., Hutchby, J.A., Morris, A.S., Trew, R.J.: `Harmonic cancellation in monolithic AlGaAs/GaAs Npn/Pnp HBT push-pull pairs', Proc. IEEE/Cornell Conf. on Adv. Concepts in High Speed Semiconductor Devices and circuits, 1991, p. 305–314.
    6. 6)
      • K. Nagata , O. Nakajima , Y. Yamauchi , T. Nittono , H. Ito , T. Ishibashi . Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer. IEEE Trans. , 2 - 7
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