The first fabrication is reported of a buried ridge structure Ga0.8In0.2As/GaAs/Ga0.51In0.49P laser emitting at 0.98μm grown by two-step low pressure metal organic chemical vapour deposition. The width of the ridge is 2μm. Laser output power greater than 40mW with a threshold current of 30mA has been measured. A typical quantum efficiency of η 60% was obtained without any facet coating. Excellent homogeneity and uniformity have been achieved over a wafer area of 10cm2.
Inspec keywords: semiconductor growth; gallium arsenide; III-V semiconductors; vapour phase epitaxial growth; gallium compounds; optical workshop techniques; semiconductor junction lasers; optical waveguides; indium compounds; laser transitions
Other keywords:
Subjects: Semiconductor lasers; Epitaxial growth; Chemical vapour deposition; Optical fabrication, surface grinding; Lasing action in semiconductors; Design of specific laser systems
References
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