Temperature independent quantum well FET with delta channel doping

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Temperature independent quantum well FET with delta channel doping

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© The Institution of Electrical Engineers
Published

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1.4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300–70K.

Inspec keywords: high electron mobility transistors; Hall effect; semiconductor quantum wells; doping profiles; carrier density

Other keywords: doping concentration; carrier concentration; temperature independent device; delta channel doping; 300 to 1.4 K; on-wafer probing; FET; constant Hall mobility; quantum well structure

Subjects: Semiconductor doping; Other field effect devices

References

    1. 1)
      • Zrenner, A., Reisinger, N., Koch, F.: `Electron subband structure of a δ(z)-doped layer in n-GaAs', 17th Int. Conf. on Phys. of Semiconductors, August 1984, San Francisco, CA, p. 325–328.
    2. 2)
      • E. Shubert , J. Cunningham , W. Tsang . Self-aligned enhancement-mode and depletion mode GaAs field-effect transistors employing the delta doping technique. Appl. Phys. Lett. , 1729 - 1731
    3. 3)
      • E. Shubert , J. Cunningham , W. Tsang . Electron-mobility enhancement and electron-concentration enhancement in delta doped n-GaAs at T = 300K. Solid State Commun. , 591 - 594
    4. 4)
      • W. Hong , J. Harbison , L. Florez , J. Abeles . DC and AC characteristics of Delta-Doped GaAs FET. IEEE Electron Device Lett. , 310 - 311
    5. 5)
      • T. Makimoto , N. Kobayashi , Y. Horikoshi . Electron conduction in GaAs atomic layer doped with Si. J. Appl. Phys. , 5023 - 5026
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