Multiplanar silicon doping of GaAs using disilane by GSMBE
Silicon multiplanar doping was employed to improve the disilane doping efficiency during the growth of GaAs by GSMBE using triethylgallium and arsine as matrix element sources. The doping efficiency was 100% for Si planar separations {δs) of 10nm or greater. A maximum carrier concentration of 7.5 × 1018cm-3 was achieved at δs = 5nm.