© The Institution of Electrical Engineers
Silicon multiplanar doping was employed to improve the disilane doping efficiency during the growth of GaAs by GSMBE using triethylgallium and arsine as matrix element sources. The doping efficiency was 100% for Si planar separations {δs) of 10nm or greater. A maximum carrier concentration of 7.5 × 1018cm-3 was achieved at δs = 5nm.
References
-
-
1)
-
W. Tsang
.
A review of CBE, MOMBE, and GSMBE.
J. Cryst. Growth
,
529 -
538
-
2)
-
C.E.C. Wood ,
G. Metze ,
J. Berry ,
L.F. Eastman
.
Complex free-carrier profile synthesis by “atomic-plane” doping on MBE GaAs.
J. Appl. Phys.
,
383 -
387
-
3)
-
P.J. Skevington ,
D.A. Andrews ,
G.J. Davies
.
Anomalous silicon and tin doping behaviour in indium phosphide grown chemical beam epitaxy.
Appl. Phys. Lett.
,
1546 -
1548
-
4)
-
E.F. Schubert ,
J.M. Kuo ,
R.F. Kopf
.
The theory and experiment of capacitance-voltage profiling on semiconductors with quantum confinement.
J. Electron. Mater.
,
521 -
531
-
5)
-
E.F. Schubert ,
J.E. Cunningham ,
W.T. Tsang
.
Electronmobility enhancement and electron concentration enhancement in delta-doped n-GaAs at 300K.
Solid State Commun.
,
591 -
594
-
6)
-
A. Sandhu ,
T. Fujii ,
H. Ando ,
H.A. Ishikawa
.
A study of cold dopant sources for gas source MBE.
Jpn. J. Appl. Phys.
,
L1033 -
L1035
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19920751
Related content
content/journals/10.1049/el_19920751
pub_keyword,iet_inspecKeyword,pub_concept
6
6