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Multiplanar silicon doping of GaAs using disilane by GSMBE

Multiplanar silicon doping of GaAs using disilane by GSMBE

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© The Institution of Electrical Engineers
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Silicon multiplanar doping was employed to improve the disilane doping efficiency during the growth of GaAs by GSMBE using triethylgallium and arsine as matrix element sources. The doping efficiency was 100% for Si planar separations {δs) of 10nm or greater. A maximum carrier concentration of 7.5 × 1018cm-3 was achieved at δs = 5nm.

Inspec keywords: silicon; semiconductor growth; semiconductor doping; III-V semiconductors; chemical beam epitaxial growth; carrier density; gallium arsenide

Other keywords: triethylgallium; gas source MBE; maximum carrier concentration; Si2H6; multiplanar doping; GaAs:Si; disilane; GSMBE; doping efficiency

Subjects: Vacuum deposition; II-VI and III-V semiconductors; Epitaxial growth; Doping and implantation of impurities; Thin film growth, structure, and epitaxy; Semiconductor doping

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