Multiplanar silicon doping of GaAs using disilane by GSMBE

Access Full Text

Multiplanar silicon doping of GaAs using disilane by GSMBE

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Silicon multiplanar doping was employed to improve the disilane doping efficiency during the growth of GaAs by GSMBE using triethylgallium and arsine as matrix element sources. The doping efficiency was 100% for Si planar separations {δs) of 10nm or greater. A maximum carrier concentration of 7.5 × 1018cm-3 was achieved at δs = 5nm.

Inspec keywords: silicon; semiconductor growth; semiconductor doping; III-V semiconductors; chemical beam epitaxial growth; carrier density; gallium arsenide

Other keywords: triethylgallium; gas source MBE; maximum carrier concentration; Si2H6; multiplanar doping; GaAs:Si; disilane; GSMBE; doping efficiency

Subjects: Vacuum deposition; II-VI and III-V semiconductors; Epitaxial growth; Doping and implantation of impurities; Thin film growth, structure, and epitaxy; Semiconductor doping

References

    1. 1)
      • W. Tsang . A review of CBE, MOMBE, and GSMBE. J. Cryst. Growth , 529 - 538
    2. 2)
      • C.E.C. Wood , G. Metze , J. Berry , L.F. Eastman . Complex free-carrier profile synthesis by “atomic-plane” doping on MBE GaAs. J. Appl. Phys. , 383 - 387
    3. 3)
      • P.J. Skevington , D.A. Andrews , G.J. Davies . Anomalous silicon and tin doping behaviour in indium phosphide grown chemical beam epitaxy. Appl. Phys. Lett. , 1546 - 1548
    4. 4)
      • E.F. Schubert , J.M. Kuo , R.F. Kopf . The theory and experiment of capacitance-voltage profiling on semiconductors with quantum confinement. J. Electron. Mater. , 521 - 531
    5. 5)
      • E.F. Schubert , J.E. Cunningham , W.T. Tsang . Electronmobility enhancement and electron concentration enhancement in delta-doped n-GaAs at 300K. Solid State Commun. , 591 - 594
    6. 6)
      • A. Sandhu , T. Fujii , H. Ando , H.A. Ishikawa . A study of cold dopant sources for gas source MBE. Jpn. J. Appl. Phys. , L1033 - L1035
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19920751
Loading

Related content

content/journals/10.1049/el_19920751
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading