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Gunn effect in MESFET-like structures

Gunn effect in MESFET-like structures

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The performance of planar field-effect controlled transferred electron oscillators with different combinations of layer thickness and doping concentration has been investigated. A negative differential resistance has even been obtained with 0.29μm thick 1.6 × 1017 cm-3n-doped samples. This is the first time a MESFET-like active layer has exhibited the Gunn effect and has successfully been operated as a TEO at 36 GHz.


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