Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation

InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Formation of buried InGaAsP/InP quantum well waveguides by means of phosphorus ion implantation and thermal annealing during regrowth is demonstrated. Absorption spectra of implanted and unimplanted regions are used to estimate the induced index difference, which is of the order of 1% at 1.55 μm. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique, we achieve a significant reduction in propagation loss for singlemode pin waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. In addition to reduced scattering loss, buried quantum well waveguides produced by ion implantation are more manufacturable because fewer and less-critical processing steps are involved.

References

    1. 1)
      • Ralston, J.D., Camnitz, L.H., Wicks, G.W., Eastman, L.F.: `GaAs/AlGaAs waveguide with grating coupler fabricated by selective superlattice intermixing', 13th Int. Symp. Gallium arsenide and related compounds 1986, 1987, Institute of physics, p. 367–372, In.
    2. 2)
      • J.E. Zucker , T.L. Hendrickson , C.A. Burrus . Electro-optic phase modulation in GaAs/AlGaAs quantum well waveguides. Appl. Phys. Lett. , 945 - 947
    3. 3)
      • J.E. Zucker , K.L. Jones , B.I. Miller , M.G. Young , U. Koren , J.D. Evankow , C.A. Burrus . Zero-loss quantum well waveguide Mach-Zehnder modulator at 1.55 μm.. Appl. Phys. Lett. , 277 - 279
    4. 4)
      • H.C. Casey , P.L. Carter . Variation of intervalence band absorption with hole concentration in p-type InP. Appl. Phys. Lett. , 82 - 83
    5. 5)
      • R.L. Thornton , R.D. Burnham , T.L. Paoli , N. Holonyak , D.G. Deppe . Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering. Appl. Phys. Lett. , 7 - 9
    6. 6)
      • Ishida, K., Matsui, K., Fukunaga, T., Takamori, T., Kobayashi, J., Ishida, K., Nakashima, H.: `Si-induced disordering and its application to fabrication of index-guided AlGaAs MQW lasers', 13th Int. Symp. Gallium arsenide and related compounds 1986, 1987, Institute of Physics, p. 361–366, In.
    7. 7)
      • J.E. Zucker , K.L. Jones , B.I. Miller , M.G. Young , U. Koren , B. Tell , K. Brown-Goebeler . Interferometric quantum well modulators with gain. J. Lightwave Technol.
    8. 8)
      • J.E. Zucker , K.L. Jones , M.G. Young , B.I. Miller , U. Koren . Compact directional coupler switches using quantum well electro-refraction. Appl. Phys. Lett. , 2280 - 2282
    9. 9)
      • W. Xia , S.C. Lin , S.A. Pappert , C.A. Hewett , M. Fernandes , T.T. Vu , P.K.L. Yu , S.S. Lau . InGaAs/InP superlattice waveguides by elevated temperature argon ion mixing. Appl. Phys. Lett. , 2020 - 2022
    10. 10)
      • Y. Suzuki , I. Hidetoshi , T. Miyazawa , O. Mikami . Polarization mode selective channel waveguides in an InGaAsP/InP disordered superlattice. Appl. Phys. Lett. , 2745 - 2747
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19920539
Loading

Related content

content/journals/10.1049/el_19920539
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address