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Formation of buried InGaAsP/InP quantum well waveguides by means of phosphorus ion implantation and thermal annealing during regrowth is demonstrated. Absorption spectra of implanted and unimplanted regions are used to estimate the induced index difference, which is of the order of 1% at 1.55 μm. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique, we achieve a significant reduction in propagation loss for singlemode pin waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. In addition to reduced scattering loss, buried quantum well waveguides produced by ion implantation are more manufacturable because fewer and less-critical processing steps are involved.
References
-
-
1)
-
Ralston, J.D., Camnitz, L.H., Wicks, G.W., Eastman, L.F.: `GaAs/AlGaAs waveguide with grating coupler fabricated by selective superlattice intermixing', 13th Int. Symp. Gallium arsenide and related compounds 1986, 1987, Institute of physics, p. 367–372, In.
-
2)
-
J.E. Zucker ,
T.L. Hendrickson ,
C.A. Burrus
.
Electro-optic phase modulation in GaAs/AlGaAs quantum well waveguides.
Appl. Phys. Lett.
,
945 -
947
-
3)
-
J.E. Zucker ,
K.L. Jones ,
B.I. Miller ,
M.G. Young ,
U. Koren ,
J.D. Evankow ,
C.A. Burrus
.
Zero-loss quantum well waveguide Mach-Zehnder modulator at 1.55 μm..
Appl. Phys. Lett.
,
277 -
279
-
4)
-
H.C. Casey ,
P.L. Carter
.
Variation of intervalence band absorption with hole concentration in p-type InP.
Appl. Phys. Lett.
,
82 -
83
-
5)
-
R.L. Thornton ,
R.D. Burnham ,
T.L. Paoli ,
N. Holonyak ,
D.G. Deppe
.
Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering.
Appl. Phys. Lett.
,
7 -
9
-
6)
-
Ishida, K., Matsui, K., Fukunaga, T., Takamori, T., Kobayashi, J., Ishida, K., Nakashima, H.: `Si-induced disordering and its application to fabrication of index-guided AlGaAs MQW lasers', 13th Int. Symp. Gallium arsenide and related compounds 1986, 1987, Institute of Physics, p. 361–366, In.
-
7)
-
J.E. Zucker ,
K.L. Jones ,
B.I. Miller ,
M.G. Young ,
U. Koren ,
B. Tell ,
K. Brown-Goebeler
.
Interferometric quantum well modulators with gain.
J. Lightwave Technol.
-
8)
-
J.E. Zucker ,
K.L. Jones ,
M.G. Young ,
B.I. Miller ,
U. Koren
.
Compact directional coupler switches using quantum well electro-refraction.
Appl. Phys. Lett.
,
2280 -
2282
-
9)
-
W. Xia ,
S.C. Lin ,
S.A. Pappert ,
C.A. Hewett ,
M. Fernandes ,
T.T. Vu ,
P.K.L. Yu ,
S.S. Lau
.
InGaAs/InP superlattice waveguides by elevated temperature argon ion mixing.
Appl. Phys. Lett.
,
2020 -
2022
-
10)
-
Y. Suzuki ,
I. Hidetoshi ,
T. Miyazawa ,
O. Mikami
.
Polarization mode selective channel waveguides in an InGaAsP/InP disordered superlattice.
Appl. Phys. Lett.
,
2745 -
2747
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