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Formation of buried InGaAsP/InP quantum well waveguides by means of phosphorus ion implantation and thermal annealing during regrowth is demonstrated. Absorption spectra of implanted and unimplanted regions are used to estimate the induced index difference, which is of the order of 1% at 1.55 μm. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique, we achieve a significant reduction in propagation loss for singlemode pin waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. In addition to reduced scattering loss, buried quantum well waveguides produced by ion implantation are more manufacturable because fewer and less-critical processing steps are involved.
Inspec keywords: integrated optics; gallium arsenide; semiconductor quantum wells; indium compounds; ion implantation; optical waveguides; III-V semiconductors; phosphorus
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Subjects: Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Semiconductor junctions; Optical waveguides; Integrated optics; Low-dimensional structures: growth, structure and nonelectronic properties; Optical properties of nonmetallic thin films; Integrated optics; Optical waveguides and couplers; Semiconductor doping