Visible light-emitting diodes consisting of AlP–GaP short-period superlattices

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Visible light-emitting diodes consisting of AlP–GaP short-period superlattices

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© The Institution of Electrical Engineers
Published

Short-period superlattices of AlP-GaP, which form a novel class of light-emitting materials in the spectral region from red to green, were applied for the first time to visible light-emitting diodes fabricated by metal organic vapour phase epitaxy. Light emission from diodes at room temperature was found to be characteristic of the superlattices: emission spectral shift toward shorter wavelengths from red to green and emission intensity increases with decreasing the period of superlattices.

Inspec keywords: III-V semiconductors; light emitting diodes; semiconductor superlattices; aluminium compounds; gallium compounds; vapour phase epitaxial growth; semiconductor growth

Other keywords: light-emitting materials; short-period superlattices; metal organic vapour phase epitaxy; visible light-emitting diodes; AlP-GaP; emission intensity; emission spectral shift; light emission

Subjects: Semiconductor junctions; Light emitting diodes; Epitaxial growth

References

    1. 1)
      • A. Morii , I. Ohno , A. Kanda , K. Arai , K. Tokudome , K. Hara , J. Yoshino , H. Kukimoto . Short-period superlattices of (GaP)n(AlP)n grown by metalorganic vapor phase epitaxy. Jpn. J. Appl. Phys. , L1244 - L1246
    2. 2)
      • U. Gnutzmann , K. Clausecker . Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure. Appl. Phys. , 9 - 14
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