4–40 GHz MMIC distributed active combiner with 3 dB gain

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4–40 GHz MMIC distributed active combiner with 3 dB gain

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© The Institution of Electrical Engineers
Published

The development of a 4–40 GHz monolithic InP HEMT distributed active combiner is reported. This MMIC had an average gain of 3.0 dB from each input, and a minimum reverse isolation of 20 dB from 4 to 40 GHz. The active devices in this MMIC were 0.25 μm lattice-matched InGaAs- InAlAs-InP HEMTs. CPW was used as the transmission medium with an overall chip dimension of 1.0×1.0 mm2.

Inspec keywords: III-V semiconductors; indium compounds; high electron mobility transistors; MMIC; field effect integrated circuits

Other keywords: 3 dB; lattice-matched; HEMT; 4 to 40 GHz; distributed active combiner; CPW; 0.25 micron; monolithic microwave IC; MMIC; InGaAs-InAlAs-InP

Subjects: Other field effect integrated circuits; Microwave integrated circuits

References

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      • Yuen, C.: `High-gain, low-noise monolithic HEMT distributed amplifiers up to 60GHz', IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig., 1990, p. 23–26.
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      • Levy, D.: `A 2-18 GHz travelling wave lossless two-port combiner', IEEE MTT-Symp. Dig., 1986, p. 503–506.
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