Optical bistability was observed in a multiquantum well microcavity, with a 500 W/cm2 intensity threshold and a 10:1 contrast. The device design enhances the cavity finese (here up to 250), by increasing the number of layers in the Bragg mirror stacks, and simultaneously reducing the active layer thickness (here 3λ/2, i.e. 360 nm).
Inspec keywords: optical bistability; semiconductor quantum wells; quantum optics; nonlinear optics; optical logic
Other keywords:
Subjects: Nonlinear optics and devices; Optical bistability, multistability and switching; Optical logic devices and optical computing techniques
References
-
-
1)
- O. Sahlen , U. Olin , E. Masseboeuf , G. Lundgren , M. Rask . Optical bistability and gating in metallorganic vapor phase epitaxy grown GaAs etalons operating in reflection. Appl. Phys. Lett. , 1559 - 1561
-
2)
- B.G. Sfez , J.L. Oudar , J.C. Michel , R. Kuszelewicz , R. Azoulay . High contrast multiple quantum well optical bistable device with integrated Bragg reflectors. Appl. Phys. Lett. , 324 - 326
-
3)
- R. Kuszelewicz , J.L. Oudar , J.C. Michel , R. Azoulay . Monolithic GaAs/AlAs optical bistabel etalons with improved switching characteristics. Appl. Phys. Lett. , 2138 - 2141
-
4)
- J.L. Jewell , Y.H. Lee , S.L. McCall , J.P. Harbison , L.T. Florez . High-finesse(Al,Ga)As interference filters grown by molecularbeam epitaxy. Appl. Phys. Lett. , 640 - 642
-
5)
- M. Whitehead , G. Parry . High-contrast reflection modulation at normal incidence in asymmetric multiple quantum well Fabry-Perot structure. Electron. Lett. , 566 - 568
-
6)
- P.L. Gourley , T.J. Drummond . Visible, room-temperature, surface-emitting laser using an epitaxial Fabry-Perot resonator with AlGaAs/AlAs quarter-wave high reflectors and AlGaAs/ GaAs multiple quantum wells. Appl. Phys. Lett. , 1225 - 1227
-
7)
- J.L. Oudar , R. Kuszelewicz , B.G. Sfez , J.C. Michel , R. Planel . Prospects for further threshold reduction in bistable microesonators. Opt. and Quantum Electron.
-
8)
- U. Olin . Model for optical bistability in GaAs/AlGaAs Fabry-Perot etalons including diffraction, carrier diffusion, and heat conduction. J. Opt. Soc. Am. B , 35 - 42
-
9)
- Sfez, B.G., Padjen, R., Oudar, J.L.: `Experimental evidence of hysteresis narrowing due to carrier diffusion in optical bistable etalons', paper QTuI34, Tech. Dig. Series, 1991, 11, Optical Society of America, , p. 96–97, QELS.91.
-
10)
- R.J. Simes , R.H. Yan , R. Geels , L.A. Coldren , J.H. English , A.C. Gossard . Fabry-Perot multiple-quantum well index modulator. Appl. Opt. , 2103 - 2104
-
11)
- J.L. Jewell , A. Scherer , S.L. McCall , J.P. Harbison , L.T. Florez . Low-threshold vertical-cavity surface emitting microlasers. Electron. Lett. , 1123 - 1124
-
12)
- B.G. Sfez , R. Kuszelewicz , J.L. Oudar . Measurement of the nonlinear refractive index of semiconductors included in monolithic etalons. Opt. Lett. , 855 - 857
-
13)
- J.L. Oudar , B. Sfez , R. Kuszelewicz , J.C. Michel , R. Azoulay . Optical nonlinearities of GaAs-based epitaxial structures for all-optical switching. Phys. Stat. Sol.(B) , 181 - 189
-
1)
Related content