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Monolithic eight-channel photoreceiver array OEICs for HDWDM applications at 1.55 μm

Monolithic eight-channel photoreceiver array OEICs for HDWDM applications at 1.55 μm

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© The Institution of Electrical Engineers
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Eight-channel transimpcdance photoreceiver array OEICs have been successfully fabricated on 2" diameter InP substrates. The yield of fully functional arrays is as high as 37%. Individual receiver channels exhibit bandwidths in excess of 300 MHz and an average input equivalent noise current of around 4.8 pA/√(Hz), corresponding to an inferred sensitivity of −32.l dBm at 622 Mbit/s. Each receiver channel is designed to drive standard 50 Ω loads.

Inspec keywords: indium compounds; III-V semiconductors; optical communication equipment; frequency division multiplexing; gallium arsenide; integrated optoelectronics; receivers

Other keywords: monolithic eight channel photoreceiver array OEIC; sensitivity; HDWDM applications; InGaAs-InP; input equivalent noise current; InP substrate; receiver channels; 300 MHz; bandwidths; high density wavelength division multiplexing; 1.55 micron

Subjects: Optical communication; Integrated optoelectronics

References

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      • Aga, K., Yano, H., Murata, M., Kamei, H., Sasaki, G., Hayashi, H.: `High-speed eight-channel optoelectronic integrated receiver arrays comprising GalnAs pin PDs and AlInAs/GalnAs HEMTs.', Proc. OFC '91, February 1991, San Diego, TuB2.
    2. 2)
      • Baker, N., Kanabar, Y.: `A novel multichannel grating demultiplexer receiver for HDWDM single mode fibre optic system', ECOC '89, September 1989, 1, p. 324–327, Proceedings.
    3. 3)
      • Chang, G.K., Hong, W.P., Bhat, R., Nguyen, C.K., Gimlett, J.L., Lin, C., Hayes, J.R.: `Novel electronically switched multichannel receiver for wavelength-division-multiplexing systems', Proc. OFC '91, February 1991, San Diego, TuB5.
    4. 4)
      • W.S. Lee , D.A.H. Spear , P.J.G. Dawe , S.W. Bland . Monolithic integration of an InP/InGaAs four-channel transimpedance optical receiver array. Electron Lett. , 1833 - 1834
    5. 5)
      • Otsuka, N., Matsuda, K., Shibata, J.: `InGaAs/InP monolithic array photoreceiver consisting of 10 PIN/FETs.', paper 20C4, Tech. Dig. IOOC '89, 1986, Kobe, p. 166–167.
    6. 6)
      • C. Mansfield . Monolithically integrated four-channel receiver array using diffused InGaAs JFET technology. Electron. Lett. , 1632 - 1633
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