Activation of Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition

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Activation of Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition

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© The Institution of Electrical Engineers
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Activation of the Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition (MOCVD) has been successfully improved using post-heat treatment. The p-type carrier concentration and electrical activity in the (Al0.65Ga0.35)0.5In 0.5P layers were 1.8 × 1016cm-3 and 0.7, respectively. Activation of the Zn acceptors was found to be attributable to the hydrogen in the AIGaInP layer.

Inspec keywords: semiconductor doping; gallium compounds; zinc; semiconductor growth; III-V semiconductors; semiconductor epitaxial layers; chemical beam epitaxial growth; indium compounds; aluminium compounds

Other keywords: MOCVD; p-type carrier concentration; electrical activity; semiconductors; metal organic chemical vapour deposition; AlGaInP:Zn,H; misoriented substrates; post-heat treatment

Subjects: Epitaxial growth; Semiconductor doping

References

    1. 1)
      • Ishikawa, M., Suzuki, M., Nishikawa, Y., Itaya, K., Hatakoshi, G., Kokubun, Y., Uematsu, Y.: `Passivation and diffusion behaviour of Zn in MOCVD grown InGaAlP and its effect on the device characteristics of visible lasers', Conference Series 106, Int Symp. GaAs and Related Compounds, 1989, Karuizawa , Institute of Physics, p. 575–580, 1990, Bristol and NY.
    2. 2)
      • Valster, A., Liedenbaum, C.T.H.F., van der Heuden, J.M.M., Finke, M.N., Severens, A.L.G., Boermans, M.J.B.: `633 nm CW operation of GaInP/AIGaInP laser diodes', 12th IEEE Int Semiconductor Laser Conf., 1990, Davos , p. 28–29.
    3. 3)
      • H. Hamada , M. Shono , S. Honda , R. Hiroyama , K. Yodoshi , T. Yamaguchi . AIGaInP visible laser diodes grown on misoriented substrates. IEEE J. Quantum Electron. , 1483 - 1490
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      • G. Hatakoshi , K. Itaya , M. Ishikawa , M. Okajima , Y. Uematsu . Short-wavelength InGaAlP visible laser diodes. IEEE J. Quantum Electron. , 1476 - 1482
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      • G.R. Antell , A.T.R. Briggs , B.R. Butuer , S.A. Kitching , J.P. Stagg , A. Chew , D.E. Sykes . Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy. Appl. Phys. Lett. , 758 - 760
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