Elimination of intervalence band absorption in compressively strained InGaAs/InP 1.5 μm MQW lasers observed by hydrostatic pressure measurements

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Elimination of intervalence band absorption in compressively strained InGaAs/InP 1.5 μm MQW lasers observed by hydrostatic pressure measurements

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© The Institution of Electrical Engineers
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Hydrostatic pressure was applied to 1.5 μm buried heterostructure In0.8Ga0 2As/InP (1.8% strain) lasers. In contrast to bulk and unstrained MQW devices, no increase in quantum differential efficiency was observed indicating negligible intervalence band absorption. The pressure and temperature variation of the threshold current was explained assuming Auger recombination and a reduced hole mass.

Inspec keywords: indium compounds; III-V semiconductors; gallium arsenide; Auger effect; semiconductor junction lasers; laser transitions

Other keywords: Auger recombination; quantum differential efficiency; MQW lasers; hydrostatic pressure measurements; absorption elimination; intervalence band absorption; In0.8Ga0.2As-InP; hole mass-reduction; threshold current; compressively strained; temperature variation; pressure variation; 1.5 micron; buried heterostructure; semiconductor lasers

Subjects: Lasing action in semiconductors; Semiconductor lasers

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