access icon free Erratum: Dry etching process for fabrication of optoelectronic gratings in III-V substrates

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Inspec keywords: III-V semiconductors; optoelectronic devices; optical workshop techniques; electron beam lithography; semiconductor technology; diffraction gratings; sputter etching; substrates

Other keywords: optoelectronic gratings; organosilicon electron-beam resist; H2/CH4 plasma; DFB lasers; RIE; III-V substrates; first-order diffraction gratings; SiO2 thin films; fabrication; reactive ion etching; III-V semiconductors; three-step dry etching process; InP; DBR lasers

Subjects: Surface treatment and degradation in semiconductor technology; Gratings, echelles; Surface treatment (semiconductor technology); Optical fabrication, surface grinding; Lithography (semiconductor technology); Optoelectronic materials and devices

http://iet.metastore.ingenta.com/content/journals/10.1049/el_19920212
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This article contains an Erratum to the following content:
Dry etching process for fabrication of optoelectronic gratings in III-V substrates