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Schottky-collector vertical PNM bipolar transistor

Schottky-collector vertical PNM bipolar transistor

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A submicrometre inverted vertical PNM bipolar transistor with a platinum-silicide (PtSi) silicon Schottky collector-base diode and a p+n emitter-base diode is demonstrated. The transistor presents normal bipolar device characteristics with a DC current gain as high as 40. Faster switches can be made by using PNM transistors. They offer a desirable performance leverage when implemented in VLSI logic circuits.

References

    1. 1)
      • S. Akbar , N. Anantha , C. Hsieh , J. Walsh . Method of fabrication of Schottky bipolar transistor. IBM Technical Disclosure Bulletin , 11
    2. 2)
      • G.A. May . The Schottky-barrier collector transistor. Solid-State Electron. , 613 - 619
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