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InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

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InP/InGaAs double-heterojunction bipolar transistors (DHBTs) have been fabricated with an emitter area of 9 × 9 μm2 using a nonselfaligned process. Small-signal current gain in excess of 400 was obtained. Device measurements given an f1 = 39 GHz which, to the authors' knowledge, is the highest value reported for an InP/InGaAs DHBT. The value of f1 is in excess of 30GHz for a range of current densities from 8 to 100kA cm-2.

References

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      • Y.K. Chen , R.N. Nottenburg , M.B. Panish , R.A. Hamm , D.A. Humphrey . Subpicosecond InP-InGaAs heterostructure bipolar transistors. IEEE Electron Device Lett. , 267 - 269
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      • P.J. Topham , J. Thompson , I. Griffith , B.A. Hollis , N.A. Hiams , J.G. Parton , R.C. Goodfellow . Digital integrated circuits using GalnAs/InP heterojunction bipolar transistors. Electron. Lett. , 1116 - 1117
    3. 3)
      • Meyyappan, M., Andrews, G., Morrison, B.J., Krbskovsky, J.P., Grubin, H.I.: `Analysis of InP/InGaAs double heterostructure bipolar transistors for high frequency applications', Proc 3rd Int. Conf. on Indium Phosphide and Related Materials, 1991, Cardiff, UK, p. 291–294.
    4. 4)
      • P.A. Houston , C. Blaauw , A. Margittai , M.N. Svilans , N. Puetz , D.J. Day , F.R. Shepherd , A.J. Sprjngthorpe . Doubleheterojunction bipolar transistors in InP/GalnAs grown by metal organic chemical vapour deposition. Electron. Lett. , 931 - 932
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