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Enhancement of effective Schottky barrier height on n-type InP

Enhancement of effective Schottky barrier height on n-type InP

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The effective Schottky barrier height on n-type InP is increased by a thin heavily-doped p-type surface layer grown by gas-source molecular beam epitaxy. The relationships between the barrier height increment and the doping level and thickness of the surface layer have been studied. The Schottky diodes fabricated by this method show reasonably low leakage current at high reverse bias and high reverse break-down voltage.

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