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Metals semiconductor-metal photodector using Fe-implanted In0.53Ga0.47As

Metals semiconductor-metal photodector using Fe-implanted In0.53Ga0.47As

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A two finger interdigitated metal-semiconductor-metal detector has been made using high-resistance Fe-implanted In0.53Ga0.47As material grown on InP:Fe. The fingers are 30μm long with 1μm width and 1.5μm separation. The breakdown voltage of the device is 5V. At 2V bias, the device has a dark current of 250 nA and a DC responsivity of 0.375 A/W at 13μm. The full width at half maximum of the response of the detector at 1.3μm is 260 ps.

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