@ARTICLE{ iet:/content/journals/10.1049/el_19920025, author = {K.R. Poguntke}, author = {A.R. Adams}, keywords = {radiative recombination coefficients;pressure dependence;radiative efficiency;Auger recombination coefficient;long wavelength semiconductor lasers;1.5 micron;laser diodes;spontaneous emission efficiency;fundamental band structure;temperature dependence;unstrained quantum well lasers;}, ISSN = {0013-5194}, language = {English}, abstract = {An analysis of the spontaneous emission efficiency of laser diodes which yields C/B3/2 where C and B are the Auger and radiative recombination coefficients, respectively, is proposed as a measure of the fundamental band structure and is applied to the temperature and pressure dependence of unstrained 1.5μm quantum well lasers.}, title = {Analysis of radiative efficiency of long wavelength semiconductor lasers}, journal = {Electronics Letters}, issue = {1}, volume = {28}, year = {1992}, month = {January}, pages = {41-42(1)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Electrical Engineers}, url = {https://digital-library.theiet.org/;jsessionid=4r6a4ucv24s66.x-iet-live-01content/journals/10.1049/el_19920025} }