Analysis of radiative efficiency of long wavelength semiconductor lasers

Analysis of radiative efficiency of long wavelength semiconductor lasers

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An analysis of the spontaneous emission efficiency of laser diodes which yields C/B3/2 where C and B are the Auger and radiative recombination coefficients, respectively, is proposed as a measure of the fundamental band structure and is applied to the temperature and pressure dependence of unstrained 1.5μm quantum well lasers.


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