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Electron beam controlled latch operating under electron beam testing conditions

Electron beam controlled latch operating under electron beam testing conditions

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© The Institution of Electrical Engineers
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The principle of a latch controlled by an electron beam is presented. Based on experimental results, electron beam switching (active role) and electron beam testing (passive role) are demonstrated and conditions for E-beam sensitivity of the latch are discussed.

Inspec keywords: electron beam applications; flip-flops; logic testing

Other keywords: electron beam switching; electron beam control; electron beam testing; latch; E-beam sensitivity

Subjects: Logic circuits; Logic and switching circuits

References

    1. 1)
      • E. Wolfgang . Electron beam testing. Microelectron. Eng. , 77 - 106
    2. 2)
      • S. Görlich , E. Kubalek . E-beam induced damage on passivated metal oxide semiconductor devices. Scanning Electron Microsc , 87 - 95
    3. 3)
      • E. Menzel , E. Kubalek . Fundamentals of electron beam testing of integrated circuits. Scanning , 103 - 122
    4. 4)
      • P. Girard , P. Nouet , B. Pistoulet . Single energy e-beam latch activation and deactivation. Microelectron. Eng. , 129 - 133
    5. 5)
      • P. Nouet , P. Girard , B. Pistoulet . Towards improvements on VLSI circuit reconfiguration: a new E-beam activated cell operating in the E.B.T. conditions, Defect and fault tolerance in VLSI systems III.
    6. 6)
      • D.C. Shaver . Techniques for electron beam testing and restructuring integrated circuits. J. Vac. Sci. & Technol. , 4 , 1010 - 1013
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