http://iet.metastore.ingenta.com
1887

1.5<λ<1.7 μm strained multiquantum well InGaAs/InGaAsP diode lasers

1.5<λ<1.7 μm strained multiquantum well InGaAs/InGaAsP diode lasers

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The long wavelength limitations of strained In0.7Ga0.3As/InGaAsP four-quantum well (QW) lasers are investigated. For this confining structure and QW composition, wavelengths range from 1.52 to l.72 μm for QW thicknesses between 33 and 70 Å, and there is an optimum QW thickness of ~40 Å.

References

    1. 1)
      • W.T. Tsang , M.C. Wu , L. Yang , Y.K. Chen , A.M. Sergent . Strained-layer 1.5 μm wavelength InGaAs/InP multiple quantum well lasers grown by chemical beam epitaxy. Electron. Lett. , 2035 - 2036
    2. 2)
      • U. Koren , M. Oron , M.G. Young , B.I. Miller , J.L. Demiguel , G. Raybon , M. Chien . Low threshold highly efficient strained quantum well lasers at 1.5μm wavelength. Electron. Lett. , 465 - 467
    3. 3)
      • P.J.A. Thus , L.F. Tiemeuer , P.I. Kuindersma , J.J.M. Binsma , T. van Dongen . High-performance 1.5μm wavelength InGaAs–InGaAsP strained quantum well lasers and amplifiers. IEEE J. Quantum Electron. , 1426 - 1439
    4. 4)
      • H. Temkin , T. Tanbun-Ek , R.A. Logan . Strained InGaAs/InP quantum well lasers. Appl. Phys. Lett. , 1210 - 1212
    5. 5)
      • R.G. Waters , P.K. York , K.J. Beernink , J.J. Coleman . A viable 1100nm diode laser. J. Appl. Phys. , 1132 - 1134
    6. 6)
      • D. Kasemset , C.-S. Hong , N.B. Patel , P.D. Dapkus . Graded barrier single quantum well lasers—theory and experiment. IEEE J. Quantum Electron. , 1025 - 1029
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19920023
Loading

Related content

content/journals/10.1049/el_19920023
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address