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GaAs/AlGaAs delta-doped staircase avalanche photodiode with separated absorption layer

GaAs/AlGaAs delta-doped staircase avalanche photodiode with separated absorption layer

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A GaAs/AIGaAs staircase SAM-APD containing a 10 stage undoped staircase multiplication region is demonstrated. Doping dipoles were inserted in GaAs/Al0.45Ga0.55As interfaces to increase the effective conduction band offset. Typical dark current at 0.9VB was 70pA. The maximum avalanche gain of 1500 was measured near the onset of breakdown. An effective ionisation rate ratio kaff = 0.2 was obtained from multiplication noise measurements.

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