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Pulsed and CW high temperature operation of InGaAs/GaAs strained layer vertical cavity surface emitting lasers

Pulsed and CW high temperature operation of InGaAs/GaAs strained layer vertical cavity surface emitting lasers

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The performance of Strained layer InGaAs/GaAs vertical cavity surface emitting lasers defined by ion implantation over a ∼ 75°C temperature range is reported on. Maximum CW output levels for the temperature extremes of 10 and 86°C are 7.5mW and 200μW, respectively, for 20 × 20μm2 devices. The temperature dependence of the CW threshold current exhibits exponential behaviour to 80°C.

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