Hot-carrier reliability in double-implanted lightly doped drain devices for advanced drams

Hot-carrier reliability in double-implanted lightly doped drain devices for advanced drams

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Hot-electron degradation in short-channel (0.50 μm and 0.83 μm) double-implanted lightly doped drain (DI-LDD) devices was characterised using DC stress tests. Compared to lightly doped drain (LDD) devices of the same effective channel length Leff, the measurements indicate that channel hot-electron injection is more prevalent in devices with the p+-pocket implant due to a higher peak channel electric field. Degradation is more severe in both the drain current and transconductance. However, an improvement in shortchannel effects was seen in DI-LDD devices over LDD devices. For the same Leff, the punch-through voltage was higher and the subthreshold swing lower for the DI-LDD devices.


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