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New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold

New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold

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© The Institution of Electrical Engineers
Published

Linewidth measurements of singlemode and multimode InGaAsP lasers were made above and below threshold with adapted interferometers. Linewidth against inverse power plots, Δv = f(1/P), show different Schawlow–Townes slopes above and below threshold. Differences have been observed depending on singlemode or multimode laser behaviour. In the singlemode case the linewidth enhancement factor has been determined (α = 2.6) by extrapolating and correlating results above and below threshold.

Inspec keywords: indium compounds; light interferometry; laser variables measurement; gallium arsenide; gallium compounds; III-V semiconductors; spectral line breadth; semiconductor junction lasers; laser modes

Other keywords: InGaAsP lasers; laser threshold; spectrum analysis; Schawlow-Townes slopes; multimode; semiconductor lasers; nterferometers; linewidth enhancement determination; singlemode

Subjects: Lasing action in semiconductors; Optical variables measurement; Semiconductor lasers; Laser beam interactions and properties; Laser beam characteristics and interactions; Optical interferometry

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