Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE

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Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE

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© The Institution of Electrical Engineers
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High performance, selfaligned processed npn and pnp AlGaAs/GaAs HBTs grown by MOMBE are reported. Tin and carbon were used as n- and p-type dopants, respectively. Cutoff frequency and maximum frequency of oscillation of 53 and 128 GHz, respectively, were obtained for npn transistors (2×5 μm2 emitter) and values of 30 and 12 GHz, respectively, were measured for pnp transistors (2×4 μm2 emitter).

Inspec keywords: molecular beam epitaxial growth; solid-state microwave devices; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; aluminium compounds

Other keywords: C dopant; HBTs; p-n-p devices; n-p-n devices; AlGaAs-GaAs; n-type dopant; p-type dopants; selfaligned processed; MOMBE; 12 to 128 GHz; Sn dopant

Subjects: Semiconductor doping; Bipolar transistors; Epitaxial growth; Solid-state microwave circuits and devices

References

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