Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE
Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE
- Author(s): F. Ren ; C.R. Abernathy ; S.J. Pearton ; T.R. Fullowan ; J.R. Lothian ; P.W. Wisk ; Y.K. Chen ; W.S. Hobson ; P.R. Smith
- DOI: 10.1049/el:19911479
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- Author(s): F. Ren 1 ; C.R. Abernathy 1 ; S.J. Pearton 1 ; T.R. Fullowan 1 ; J.R. Lothian 1 ; P.W. Wisk 1 ; Y.K. Chen 1 ; W.S. Hobson 1 ; P.R. Smith 1
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View affiliations
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Affiliations:
1: AT&T Bell Laboratories, Murray Hill, USA
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Affiliations:
1: AT&T Bell Laboratories, Murray Hill, USA
- Source:
Volume 27, Issue 25,
5 December 1991,
p.
2391 – 2393
DOI: 10.1049/el:19911479 , Print ISSN 0013-5194, Online ISSN 1350-911X
High performance, selfaligned processed npn and pnp AlGaAs/GaAs HBTs grown by MOMBE are reported. Tin and carbon were used as n- and p-type dopants, respectively. Cutoff frequency and maximum frequency of oscillation of 53 and 128 GHz, respectively, were obtained for npn transistors (2×5 μm2 emitter) and values of 30 and 12 GHz, respectively, were measured for pnp transistors (2×4 μm2 emitter).
Inspec keywords: molecular beam epitaxial growth; solid-state microwave devices; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; aluminium compounds
Other keywords:
Subjects: Semiconductor doping; Bipolar transistors; Epitaxial growth; Solid-state microwave circuits and devices
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