Ultrafast polarisation switching in ridge-waveguide laser diodes
Ultrafast polarisation switching in ridge-waveguide laser diodes
- Author(s): A. Klehr ; A. Bärwolff ; R. Müller ; M. Voβ ; J. Sacher ; W. Elsässer ; E.O. Göbel
- DOI: 10.1049/el:19911049
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): A. Klehr 1 ; A. Bärwolff 1 ; R. Müller 1 ; M. Voβ 1 ; J. Sacher 2 ; W. Elsässer 2 ; E.O. Göbel 2
-
-
View affiliations
-
Affiliations:
1: Abteilung Halbleiterlaserphysik, Zentralinstitut für Optik und Spektroskopie, Berlin, Germany
2: Fachbereich Physik, Philipps Universität Marburg, Marburg, Germany
-
Affiliations:
1: Abteilung Halbleiterlaserphysik, Zentralinstitut für Optik und Spektroskopie, Berlin, Germany
- Source:
Volume 27, Issue 18,
29 August 1991,
p.
1680 – 1682
DOI: 10.1049/el:19911049 , Print ISSN 0013-5194, Online ISSN 1350-911X
Time resolved polarisation characteristics of 1.3μm GaInAsP/InP-RW lasers are presented, showing the switching behaviour between the TE and TM mode as well as polarisation bistability. A switching time of about 50ps is observed for the transition between TE and TM polarisation under 900MHz current modulation. This is the shortest switching time measured so far.
Inspec keywords: light polarisation; high-speed optical techniques; semiconductor junction lasers; indium compounds; optical switches; III-V semiconductors; gallium arsenide
Other keywords:
Subjects: Design of specific laser systems; Ultrafast optical techniques; Semiconductor lasers; Lasing action in semiconductors
References
-
-
1)
- Y.C. Chen , J.M. Liu . Polarization bistability in semiconductor lasers. Appl. Phys. Lett. , 16 - 18
-
2)
- R.S. Linton , J.H. White , J.E. Carroll , J. Singh , M.J. Adams , J.D. Henning . Optically triggered polarisation bistability in GaInAsP twin-stripe injection lasers using integrated devices. Electron. Lett. , 1232 - 1233
-
3)
- T. Toda , N. Ogasawara , R. Ito . Polarization control by optical feedback in semiconductor lasers. Jpn. J. Appl. Phys. , 1702 - 1707
-
4)
- M.-C. Amann , B. Stegmüller . Low-threshold IngaAsP-InP metal-clad ridge waveguide (MCRW) lasers for l.3μm wavelength. Appl. Phys. Lett.
-
5)
- Y. Mori , J. Shibata , T. Kajiwara . Optical polarization bistability with high switching speed in a TM wave injected buried heterostructure laser. Appl. Phys. Lett. , 1971 - 1973
-
6)
- A. Klehr , B. Rheinländer , O. Ziemann . Fast polarization switching and polarization bistability in 1.3μm InGaAsP/InP ridge-waveguide laser diodes at room temperature. Int. J. Optoelectron. , 6 , 513 - 522
-
7)
- W.H. Loh , A.T. Schremer , C.L. Tang . Polarization self-modulation at multigigahertz frequencies in an external cavity semiconductor laser. IEEE Photonics Technol. Lett. , 7 , 467 - 469
-
8)
- Schremer, A.T., Loh, W.H., Czeki, Y., Tang, C.L.: `Polarization self-modulation in external-cavity semiconductor lasers', PDP 32, CLEO 1990.
-
9)
- T. Fujita , A. Schremer , C.L. Tang . Polarization bistability in external cavity semiconductor lasers. Appl. Phys. Lett. , 392 - 394
-
10)
- V. Mitsuhashi . Polarization control of an antireflection coated GaAlAs laser diode by an external optical feedback. J. App. Phys. , 9200 - 9201
-
11)
- A. Sapia , P. Spano , B. Daino . Polarization switching in semiconductor lasers driven via injection from an external radiation. Appl. Phys. Lett. , 57 - 59
-
1)
Related content
