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Base transit time for SiGe-base heterojunction bipolar transistors

Base transit time for SiGe-base heterojunction bipolar transistors

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© The Institution of Electrical Engineers
Published

The base transit time expressions for SiGe base heterojunction bipolar transistors are presented including the accelerating field effects due to the base bandgap grading and doping grading, and the retarding field (opposing drift field) effect from the graded boron profile down towards the emitter. It is found that the retarding field exhibits 40–80% contribution to the base transit time, depending on the boron concentration near the emitter. The results of base transit time from these analytic expressions are unambiguously supported by the published simulation data.

Inspec keywords: semiconductor doping; semiconductor device models; boron; heterojunction bipolar transistors; Ge-Si alloys

Other keywords: heterojunction bipolar transistors; base bandgap grading; opposing drift field; SiGe base; retarding field; doping grading; graded B profile; SiGe:B; accelerating field effects; base transit time expressions; base transit time

Subjects: Bipolar transistors; Semiconductor doping; Semiconductor device modelling, equivalent circuits, design and testing

References

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