Lateral variance of implanted ions

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Lateral variance of implanted ions

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© The Institution of Electrical Engineers
Published

A quadratic model is presented whereby the depth-dependent lateral variance of ions implanted into amorphous targets may be estimated from a knowledge of the first seven moments of the distribution. We compare our results, and those derived using a perturbation approach of Lorenz et al.,7 against high resolution Monte-Carlo data.

Inspec keywords: ion implantation; amorphous semiconductors; Monte Carlo methods; modelling

Other keywords: implanted ions; quadratic model; depth-dependent lateral variance; lateral spreading; high resolution Monte-Carlo data; amorphous targets

Subjects: Monte Carlo methods; Semiconductor doping; Doping and implantation of impurities

References

    1. 1)
      • D.G. Ashworth , R. Oven . (1985) Theoretical considerations of the lateral spreading of implanted ions, IEE Dig. No. 74.
    2. 2)
      • Lorenz, J., Kruger, W., Barthel, A.: `Simulation of the lateral spread of implanted ions: theory', Proceedings of the Sixth International NASECODE Conference, Boole Press Ltd., Ireland, p. 513–520.
    3. 3)
      • R. Oven , D.G. Ashworth . A comparison of two-dimensional ion-implantation profiles. J. Phys. D , 642 - 646
    4. 4)
      • J. Lindhard , M. Scharff , H.E. Schiøtt . Range concepts and heavy ion ranges. K. Danske Vidensk. Selsk. Mat.-Fys. Meddr. , 14
    5. 5)
      • Oven, R., Ashworth, D.G., Hill, C.: `Simulation and measurement of the lateral spreading of ions implanted into amorphous targets', Proceedings of the Third International SISDEP Conference, 1988, Technoprint, Bologna, p. 429–440.
    6. 6)
      • D.G. Ashworth , R. Oven . Theoretical predictions of the lateral spreading of implanted ions. J. Phys. C , 5769 - 5781
    7. 7)
      • G. Hobler , E. Langer , S. Selberherr . Two-dimensional modeling of ion implantation with spatial moments. Solid State Electronics , 445 - 455
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