GaAs/AlGaAs dynamic random access memory cell

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GaAs/AlGaAs dynamic random access memory cell

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© The Institution of Electrical Engineers
Published

A single-transistor dynamic random access memory circuit using a GaAs/AlGaAs structure as the storage cell and modulation-doped field-effect transistors for memory accessing and output sensing has been developed. The functionality of the memory is demonstrated and a storage time of 5.4s is measured at room temperature.

Inspec keywords: high electron mobility transistors; aluminium compounds; III-V semiconductors; gallium arsenide; DRAM chips; field effect integrated circuits

Other keywords: output sensing; memory accessing; GaAs-AlGaAs; storage time; dynamic random access memory; MODFET; single transistor memory cell; modulation-doped field-effect transistors; 5.4 s; DRAM

Subjects: Semiconductor storage; Other field effect integrated circuits; Memory circuits

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