http://iet.metastore.ingenta.com
1887

GaAs/AlGaAs dynamic random access memory cell

GaAs/AlGaAs dynamic random access memory cell

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A single-transistor dynamic random access memory circuit using a GaAs/AlGaAs structure as the storage cell and modulation-doped field-effect transistors for memory accessing and output sensing has been developed. The functionality of the memory is demonstrated and a storage time of 5.4s is measured at room temperature.

References

    1. 1)
      • Notomi, S., Awano, Y., Kosugi, M., Nagata, T., Kosemura, K., Ono, M., Kobayashi, N., Odani, K., Mimura, T., Abe, M.: `A high speed 1k × 4-bit static RAM using 0.5 μm-gate HEMT', IEEE GaAs IC Symp. Tech. Dig., 1987, p. 177–180.
    2. 2)
      • Takano, S., Makino, H., Tanino, N., Noda, M., Nishitani, K., Kayano, S.: `A 16k GaAs SRAM', IEEE ISCC Dig. Tech. Papers, 1987, p. 140–141.
    3. 3)
      • T.E. Dungan , P.G. Neudeck , M.R. Melloch , J.A. Cooper . One-transistor GaAs MESFET- and JFET-accessed dynamic RAM cells for high-speed medium density applications. IEEE Trans. , 1599 - 1607
    4. 4)
      • A.I. Akinwande . (1989) Toward VLSI GaAs heterostructure FET integrated circuits, IEEE IEDM Tech. Dig..
    5. 5)
      • W.D. Goodhue , B.E. Burke , K.B. Nichols , G.M. Metze , G.D. Johnson . Quantum-well charge-coupled devices for charge-coupled device-addressed multiple-quantum-well spatial light modulators. J. Vac. Sci. Technol. B. , 769 - 772
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19910837
Loading

Related content

content/journals/10.1049/el_19910837
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address