GaAs/AlGaAs dynamic random access memory cell

GaAs/AlGaAs dynamic random access memory cell

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A single-transistor dynamic random access memory circuit using a GaAs/AlGaAs structure as the storage cell and modulation-doped field-effect transistors for memory accessing and output sensing has been developed. The functionality of the memory is demonstrated and a storage time of 5.4s is measured at room temperature.


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