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access icon free Erratum: Cryogenic operation of GaAs bipolar transistors with inverted base doping

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Inspec keywords: bipolar transistors; heavily doped semiconductors; cryogenics; doping profiles; electron-hole recombination; gallium arsenide; III-V semiconductors

Other keywords: current gain; emitter injection efficiency; bipolar transistors; low temperature characteristics; inverted base doping; heavily-doped base layers; homojunction; 77 to 300 K; perimeter recombination

Subjects: Bipolar transistors; Semiconductor doping

http://iet.metastore.ingenta.com/content/journals/10.1049/el_19910764
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This article contains an Erratum to the following content:
Cryogenic operation of GaAs bipolar transistors with inverted base doping
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