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Capacitive-access CAM cell and its read/write circuit implementation

Capacitive-access CAM cell and its read/write circuit implementation

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The implementation of a capacitive-access CAM cell along with its read/write circuitry are presented. Its advantages over a standard CAM cell are: feasibility of implementing multicell write operation, ready availability of masking of individual bits of a word for the write operation, and a higher order of cell data stability. A fully functional chip has been fabricated through MOSIS using 2 μm double-metal CMOS technology.

References

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      • D. Ghosh , J.C. Daly , J. Fried . Novel content addressable memory. Electron. Lett. , 8 , 524 - 526
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      • B. Chappel , S. Schuster , G. Sai-Halasz . Stability and SER analysis ofstatic RAM cells. IEEE J. Solid-State Circuits , 1 , 383 - 390
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