http://iet.metastore.ingenta.com
1887

Extremely reduced nonlinear K-factor in high-speed strained layer multiquantum well DFB lasers

Extremely reduced nonlinear K-factor in high-speed strained layer multiquantum well DFB lasers

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The nonlinear damping K-factor value in a strained layer multiquantum well (MQW) DFB laser has drastically decreased to 0.13ns, about half of that for unstrained MQW lasers. This is mainly due to the increase in differential gain by about a factor of two. The estimated intrinsic maximum bandwidth is 68 GHz.

References

    1. 1)
      • R. Olshansky , P. Hill , A. Lanzisera , W. Powazinik . Frequency response of 1.3 μm InGaAsP high speed semiconductor lasers. IEEE J. Quantum Electron. , 1410 - 1418
    2. 2)
      • J. Eom , C.B. Su , J.S. Lacourse , R.B. Lauer . The relation of doping level to K factor and the effect on ultimate modulation performance of semiconductor lasers. IEEE. Photonics Technol. Lett. , 692 - 694
    3. 3)
      • M. Aoki , K. Uomi , T. Tsuchiya , M. Suzuki , N. Chinone . Enhanced relaxation oscillation frequency and reduced nonlinear K-factor in InGaAs/InGaAsP MQW λ/4-shifted DFB lasers. Electron. Lett. , 1841 - 1843
    4. 4)
      • I. Suemune , L.A. Coldren , M. Yamanishi , Y. Kan . Extremely wide modulation bandwidth in a low threshold current strained quantum well laser. Appl. Phys. Lett. , 1378 - 1380
    5. 5)
      • K. Uomi , N. Chinone . Proposal on reducing the damping constant in semiconductor lasers by using quantum well structures. Japan. J. Appl. Phys. , L1424 - L1425
    6. 6)
      • Y. Hirayama , M. Morinaoa , M. Tanimura , M. Onomura , M. Funemizu , M. Kushibe , N. Suzuki , M. Nakamura . 10 Gbit/s low chirp performance of strained layer multiquantum well DFB laser. Electron. Lett. , 241 - 243
    7. 7)
      • Y. Hirayama , H. Furuyama , M. Morinaga , N. Suzuki , E. Kushibe , K. Eguchi , M. Nakamura . High-speed 1.5 μm self-aligned constricted mesa DFB lasers grown entirely by MOCVD. IEEE J. Quantum Electron. , 1320 - 1323
    8. 8)
      • M. Yamada , Y. Suematsu . Analysis of gain suppression in undoped injection lasers. J. Appl. Phys. , 2653 - 2664
    9. 9)
      • M.P. Kesler , E.P. Ippen . Subpicosecond gain dynamics in GaAlAs laser diodes. Appl. Phys. Lett. , 1765 - 1767
    10. 10)
      • Sharfin, W.F., Schlafer, J., Rideout, W., Elman, B., Lauer, R.B., Lacourse, J., Crawford, F.D.: `Anomalously high damping in strained InGaAs/GaAs single quantum well lasers', paper PD-4, presented at 12th IEEE Int. Semiconductor Laser Conf., 1990, Davos.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19910548
Loading

Related content

content/journals/10.1049/el_19910548
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address