Cryogenic operation of GaAs bipolar transistors with inverted base doping

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Cryogenic operation of GaAs bipolar transistors with inverted base doping

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The low temperature characteristics of GaAs homojunction bipolar transistors with heavily-doped base layers are investigated. An increase in current gain of about a factor of five is observed when the transistors are cooled from 300 K to 77 K. This improvement is attributed to improved emitter injection efficiency and reduced perimeter recombination.

Inspec keywords: bipolar transistors; doping profiles; heavily doped semiconductors; III-V semiconductors; cryogenics; electron-hole recombination; gallium arsenide

Other keywords: perimeter recombination; homojunction; low temperature characteristics; current gain; 77 to 300 K; emitter injection efficiency; heavily-doped base layers; inverted base doping; bipolar transistors

Subjects: Bipolar transistors; Semiconductor doping

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An Erratum has been published for this content:
Erratum: Cryogenic operation of GaAs bipolar transistors with inverted base doping