Cryogenic operation of GaAs bipolar transistors with inverted base doping

Cryogenic operation of GaAs bipolar transistors with inverted base doping

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The low temperature characteristics of GaAs homojunction bipolar transistors with heavily-doped base layers are investigated. An increase in current gain of about a factor of five is observed when the transistors are cooled from 300 K to 77 K. This improvement is attributed to improved emitter injection efficiency and reduced perimeter recombination.


    1. 1)
      • J.C.S. Woo , J.D. Plummer . Optimization of silicon bipolar transistors for high current gain at low temperatures. IEEE Trans. , 1311 - 1321
    2. 2)
      • K. Yano , K. Nakazato , M. Miyamoto , M. Aoki , K. Shimohigashi . A high-currcnt-gain low-temperature pseudo-HBT utilizing a sidewall base-contact structure (SICOS). IEEE Electron Device Lett. , 452 - 454
    3. 3)
      • M.E. Klausmeier-Brown , M.R. Melloch , M.S. Lundstrom . Transistor-based measurements of electron injection currents in p-type GaAs doped 1018 to 1020 cm−3. Appl. Phys. Lett. , 160 - 162
    4. 4)
      • H.S. Bennett , J.R. Lowney . Models for heavy doping effects in gallium arsenide. J. Appl. Phys. , 521 - 527
    5. 5)
      • M.I. Nathan , W.P. Dumke , K. Wrenner , S. Tiwari , S.L. Wright , K.A. Jenkins . Electron mobility in p-type GaAs. Appl. Phys. Lett. , 654 - 656
    6. 6)
      • J.R. Lowney , H.S. Bennett . Effect of donor impurities on the conduction and valence bands of silicon. J. Appl. Phys. , 433 - 438

Related content

An Erratum has been published for this content:
Erratum: Cryogenic operation of GaAs bipolar transistors with inverted base doping
This is a required field
Please enter a valid email address