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Cryogenic operation of GaAs bipolar transistors with inverted base doping

Cryogenic operation of GaAs bipolar transistors with inverted base doping

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The low temperature characteristics of GaAs homojunction bipolar transistors with heavily-doped base layers are investigated. An increase in current gain of about a factor of five is observed when the transistors are cooled from 300 K to 77 K. This improvement is attributed to improved emitter injection efficiency and reduced perimeter recombination.

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