© The Institution of Electrical Engineers
Ion implanted Co or Fe into n-type InP produced semi-insulating (SI) layers over a wide range of ion doses. The I/V characteristics of vertical metal—SI InP—n-type InP structures demonstrated resistivities up to 6 × 102 Ω cm at low bias levels and current densities as low as 12 mA/cm2 at 2.5 V for 400keV ion energy implanted layers.
References
-
-
1)
-
E.A. Rezek ,
L.M. Zinkiewicz ,
H.D. Law
.
High-resistivity (> 103 ohm. cm) InP layers by liquid phase epitaxy.
Appl. Phys. Lett.
-
2)
-
P. Speier ,
P. Wiedemann ,
W. Kuebart ,
H. Grosskopf ,
F. Grotjahn ,
F. Schuler ,
F.J. Tegudb ,
K. Wünstel
.
(1988)
Semi-insulating Fe-doped InP layers grown by MOVPE, Semi-insulating III-V Materials.
-
3)
-
F. Vidimari ,
S. Pellegrino ,
M. Caldironi ,
A. di Paola ,
R. Chen
.
(1991)
High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth, Indium phosphide and related materials.
-
4)
-
O. Mizuno ,
H. Watanabe
.
Semi-insulating properties of Fe doped InP.
Electron, Lett.
-
5)
-
M. Sugawara ,
O. Aoki ,
M. Nakai ,
K. Tanaka ,
A. Yamaguchi ,
K. Nakajima
.
(1986)
I-V characteristics of Semi-insulating InP epitaxial layers: application to buried heterostructure lasers, Semi-Insulating III-V Materials.
-
6)
-
J.P. Donnelly ,
C.E. Hurwitz
.
High resistivity layers in n-InP produced by Fe ion implantation.
Solid-state Electron.
-
7)
-
P. Besomi ,
R.B. Wilson ,
W.R. Wagner ,
R.J. Nelson
.
Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium-gallium-arsenide-phosphide double heterostructure lasers.
J. Appl. Phys.
-
8)
-
A.T. MaCrander ,
J.A. Long ,
V.G. Riggs ,
A.F. Bloemeke ,
W.D. Johnston
.
Electrical characterization of Fe-doped semi-insulating InP grown by metalorganic chemical vapor deposition.
Appl. Phys. Lett.
-
9)
-
S.A. Schwarz ,
B. Schwartz ,
T.T. Sheng ,
S. Singh ,
B. Tell
.
Annealing behaviour of ion implanted Fe in InP.
J. Appl. Phys.
-
10)
-
B. Cockayne ,
W.R. Macewan ,
G.T. Brown
.
The single crystal growth and electrical properties of cobalt-doped indium phosphide.
J. Cryst. Growth
-
11)
-
M.A. Lampert ,
P. Mark
.
(1970)
, Current injection in solids.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19910513
Related content
content/journals/10.1049/el_19910513
pub_keyword,iet_inspecKeyword,pub_concept
6
6