Conduction type control of Si-doped GaAs on (311)A oriented substrate by V/III flux ratio in MBE
Conduction type control of Si-doped GaAs on (311)A oriented substrate by V/III flux ratio in MBE
- Author(s): T. Takamori ; K. Watanabe ; T. Fukunaga
- DOI: 10.1049/el:19910453
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- Author(s): T. Takamori 1 ; K. Watanabe 1 ; T. Fukunaga 1
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View affiliations
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Affiliations:
1: Semiconductor Technology Laboratory, Oki Electric Industry Co. Ltd., Hachioji, Japan
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Affiliations:
1: Semiconductor Technology Laboratory, Oki Electric Industry Co. Ltd., Hachioji, Japan
- Source:
Volume 27, Issue 9,
25 April 1991,
p.
729 – 730
DOI: 10.1049/el:19910453 , Print ISSN 0013-5194, Online ISSN 1350-911X
It is shown that the conduction type of MBE grown Sidoped GaAs on (311)A substrate can be controlled either to be p-type or n-type by changing the V/III flux ratio at the conventional growth temperature of 600°C. The V/III flux ratio dependence of the electron concentration is also shown.
Inspec keywords: III-V semiconductors; semiconductor epitaxial layers; molecular beam epitaxial growth; semiconductor growth; gallium arsenide; semiconductor doping
Other keywords:
Subjects: II-VI and III-V semiconductors; Epitaxial growth; Semiconductor doping; Doping and implantation of impurities
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