Low threshold current laser emitting at 637 nm
Low threshold current laser emitting at 637 nm
- Author(s): D.F. Welch ; T. Wang ; D.R. Scifres
- DOI: 10.1049/el:19910432
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- Author(s): D.F. Welch 1 ; T. Wang 1 ; D.R. Scifres 1
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View affiliations
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Affiliations:
1: Spectra Diode Laboratories, San Jose, USA
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Affiliations:
1: Spectra Diode Laboratories, San Jose, USA
- Source:
Volume 27, Issue 9,
25 April 1991,
p.
693 – 695
DOI: 10.1049/el:19910432 , Print ISSN 0013-5194, Online ISSN 1350-911X
Visible laser diodes operating at 637 nm have been fabricated with tensile strained GaInP multiple quantum well active regions. The threshold current of these lasers are as low as 1.2kA/cm2. The output from the strained active region is TM polarised.
Inspec keywords: III-V semiconductors; indium compounds; semiconductor junction lasers; gallium compounds
Other keywords:
Subjects: II-VI and III-V semiconductors; Lasing action in semiconductors; Design of specific laser systems; Semiconductor lasers
References
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